Method of production of semiconductor device and method of...

Details Method of production of semiconductor device and method of... Method of production of semiconductor device and method of...

2011-05-24

2011-05-24

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S424000, C438S427000, C438S430000, C257SE25002

Reexamination Certificate

active

07947522

ABSTRACT:
A method of production of a semiconductor device includes: forming a pattern having open element isolation regions on a first insulating film situated on a semiconductor substrate; forming trenches at the element isolation regions on the semiconductor substrate; forming a second insulating film on the first insulating film and inside the trenches; forming holes in the second insulating film in active regions sectioned by the element isolation regions; and leaving the second insulating film inside the trenches only. An interval between an outer perimeter of each the active regions and an outer perimeter of each of the holes in each of the active regions is set such that the interval in the first circuit region, in which a total area of the active regions is relatively large, is smaller than the interval in the second circuit region, in which the total area of the active regions is relatively small.

REFERENCES:
patent: 5961794 (1999-10-01), Morita
patent: 6617663 (2003-09-01), Horie et al.
patent: 7115478 (2006-10-01), Mukai et al.
patent: 2007/0087518 (2007-04-01), Ochi et al.
patent: 2004-111527 (2004-04-01), None

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