Method of production of nano particle dispersed composite...

Semiconductor device manufacturing: process – Having organic semiconductive component

Reexamination Certificate

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C438S082000, C438S086000, C438S149000, C438S517000, C438S518000, C438S522000, C438S530000, C438S660000, C438S766000, C438S767000, C438S768000, C438S769000, C438S781000, C438S782000, C438S783000, C438S784000, C438S798000, C438S800000, C438S917000, C438S918000, C438S962000

Reexamination Certificate

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07041530

ABSTRACT:
A method of the production of a nanoparticle dispersed composite material capable of controlling a particle size and a three dimensional arrangement of the nanoparticles is provided. The method of the production of a nanoparticle dispersed composite material of the present invention includes a step (a) of arranging a plurality of core fine particle-protein complexes having a core fine particle, which comprises an inorganic material, internally included within a protein on the top surface of a substrate, a step (b) of removing the protein, a step (c) of conducting ion implantation from the top surface of the substrate, and a step (d) of forming nanoparticles including the ion implanted by the ion implantation as a raw material, inside of the substrate.

REFERENCES:
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patent: 6835591 (2004-12-01), Rueckes et al.
patent: 6918946 (2005-07-01), Korgel et al.
patent: 2002/0192968 (2002-12-01), Yamashita
patent: 2003/0034486 (2003-02-01), Korgel
patent: 2005/0064185 (2005-03-01), Buretea et al.
Shigeru Kohmoto et al.; “Site-Controlled Self-Organization of Individual iNAs Quantum Dots By Scanning Tunneling Probe-Assisted Nanolithography”;Applied Physics Letters; c. 1999; vol. 75, No. 22; American Institute of Physics.
Shinji Takeoka et al; “Size-Dependent Photoluminescence From Surface-Oxidized Si Nanocrystals in a Weak Confinement Regime”;Physical Review B; c. 2000; vol. 62, No. 24; The American Physical Society.

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