Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2006-05-09
2006-05-09
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S082000, C438S086000, C438S149000, C438S517000, C438S518000, C438S522000, C438S530000, C438S660000, C438S766000, C438S767000, C438S768000, C438S769000, C438S781000, C438S782000, C438S783000, C438S784000, C438S798000, C438S800000, C438S917000, C438S918000, C438S962000
Reexamination Certificate
active
07041530
ABSTRACT:
A method of the production of a nanoparticle dispersed composite material capable of controlling a particle size and a three dimensional arrangement of the nanoparticles is provided. The method of the production of a nanoparticle dispersed composite material of the present invention includes a step (a) of arranging a plurality of core fine particle-protein complexes having a core fine particle, which comprises an inorganic material, internally included within a protein on the top surface of a substrate, a step (b) of removing the protein, a step (c) of conducting ion implantation from the top surface of the substrate, and a step (d) of forming nanoparticles including the ion implanted by the ion implantation as a raw material, inside of the substrate.
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Nunoshita Masahiro
Yamashita Ichiro
Yoshii Shigeo
Gurley Lynne A.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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