Method of production of a patterned semiconductor layer

Details Method of production of a patterned semiconductor layer Method of production of a patterned semiconductor layer

2005-03-08

2005-03-08

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S031000, C438S044000

Reexamination Certificate

active

06864112

ABSTRACT:
The present invention relates to a method for the production of semiconductor components. This method comprises the steps of applying masking layers and components on epitaxial semiconductor substrates within the epitaxy reactor without removal of the substrate from the reactor. The masking layers may be HF soluble such that a gas etchant may be introduced within the reactor so as to etch a select number and portion of masking layers. This method may be used for production of lateral integrated components on a substrate wherein the components may be of the same or different type. Such types include electronic and optoelectronic components. Numerous masking layers may be applied, each defining particular windows intended to receive each of the various components. In the reactor, the masks may be selectively removed, then the components grown in the newly exposed windows.

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