Method of producing VDMOS transistors

Details Method of producing VDMOS transistors Method of producing VDMOS transistors

1994-04-06

1995-03-07

Thomas, Tom

Fishing, trapping, and vermin destroying

437 41, 437203, H01L 21336

Patent

active

053957776

ABSTRACT:
A method of producing reduced-size VDMOS transistors having reduced leakage and a reduced propensity to latch-up. These advantages are attained by reducing the vertical projective area of the source electrodes of the VDMOS transistors. This is done by forming first trenches which are sufficiently deep to reach an epitaxial layer on a substrate of the VDMOS transistors before second trenches are formed.

REFERENCES:
patent: 4503598 (1985-03-01), Vora et al.
patent: 4625388 (1986-02-01), Rice
patent: 4682405 (1987-07-01), Blanchard et al.
patent: 4748103 (1931-05-01), Hollinger
patent: 4860084 (1989-08-01), Shibata
patent: 4960723 (1990-10-01), Davies
patent: 5089434 (1992-02-01), Hollinger

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