Method of producing titanium nitride MOS device gate electrode

Details Method of producing titanium nitride MOS device gate electrode Method of producing titanium nitride MOS device gate electrode

1983-03-07

1986-02-18

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29577C, 29578, 29590, 29591, 148174, 148DIG20, 148DIG19, 148DIG113, 148DIG147, 357 231, 357 2315, 357 65, 357 67R, 357 71, 427 86, 427 88, 427 93, H01L 21285, H01L 21322

Patent

active

045703280

ABSTRACT:
An MOS device having a gate electrode and interconnect of titanium nitride and especially titanium nitride which is formed by low pressure chemical vapor deposition. In a more specific embodiment the titanium nitride gate electrode and interconnect have a silicon layer thereover to improve oxidation protection.

REFERENCES:
patent: 3402081 (1968-09-01), Lehman
patent: 3879746 (1975-04-01), Fournier
patent: 4128670 (1978-12-01), Gaensslen
patent: 4270136 (1981-05-01), Toyokura et al.
patent: 4320249 (1982-03-01), Yamazaki
patent: 4387387 (1983-06-01), Yamazaki
patent: 4451328 (1984-05-01), Dubois
patent: 4485265 (1984-11-01), Gordon et al.
Kanamori et al., "Denshi Tsushin Gakkai Giju Kenkyu, Shingaku Giho", (Electrocommunication Institute Technical Research, Physical Science-Engineering Reports), vol. 81, No. 125, SSD81-47 to 50, Sep. 22, 1981.

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