Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-07-26
2011-07-26
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S081000, C257S090000, C257S099000, C257S103000, C257S192000, C438S022000, C438S028000, C438S033000, C438S046000
Reexamination Certificate
active
07985971
ABSTRACT:
A method of making a thin gallium-nitride (GaN)-based semiconductor structure is provided. According to one embodiment of the invention, the method includes the steps of providing a substrate; sequentially forming one or more semiconductor layers on the substrate; etching a pattern in the one or more semiconductor layers; depositing a dielectrics layer; forming a photoresist on a portion of the dielectrics layer, wherein the portion of the dielectrics layer is deposited on the one or more semiconductor layers; depositing a primer; removing the photoresist layer, wherein the primer on the photoresist is also removed; depositing a superhard material, wherein the superhard material forms in the pattern; and removing the substrate. Accordingly, the superhard material may be selectively deposited in only areas where the superhard material is desired. Vertical GaN-based light emitting devices may then be formed by cutting the semiconductor structure.
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Cai Yong
Chan Ka Wah
Chu Hung Shen
Zheng Shengmei
Hong Kong Applied Science and Technology Research Institute Co.
Kaminski Jeffri A.
Lee Kyoung
Ma Christopher
Richards N Drew
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