Method of producing thin film transistor

Details Method of producing thin film transistor Method of producing thin film transistor

1988-11-10

1989-11-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437937, 437941, H01L 2978, H01L 2712

Patent

active

048837660

ABSTRACT:
A method of producing a thin film transistor comprises the steps of preparing a structure having a substrate, an active layer and a diffusion layer formed on the substrate, and a gate electrode formed on the active layer, forming on the structure an interlayer insulator layer made of a silicon oxide hydrate (SiO.sub.x H.sub.y) having a predetermined composition, forming contact holes in the interlayer insulator layer, forming a wiring layer on the interlayer insulator layer, and carrying out a thermal process thereby diffusing hydrogen atoms within the interlayer insulator layer into at least the active layer and the diffusion layer.

REFERENCES:
patent: 3849204 (1974-11-01), Fowler
patent: 3852120 (1974-12-01), Johnson et al.
patent: 3923559 (1975-12-01), Sinha

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