Method of producing thin film transistor

Details Method of producing thin film transistor Method of producing thin film transistor

1999-02-17

2000-07-11

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

216 23, 438745, H01L 2100

Patent

active

060872721

ABSTRACT:
On the surface of an insulating substrate 1 on which a transistor is formed, a first interlayer insulation film 8 is provided, and a first contact hole 9 and a metal interconnection layer 10 are formed. A second interlayer insulation film 11 is formed covering the above items, and a second contact hole 12 and a barrier metal 13 are formed. After a first hole 14 for bonding pad is formed, a third interlayer insulation film 15 is provided, and then a third contact hole 16 and a second hole 17 for bonding pad are formed. A transparent electro-conductive film 18 is formed covering the holes 14, 16 and 17. After that, a portion of the transparent electro-conductive film 18 locating above the holes 14, 17 for bonding pad is removed to have the metal interconnection layer 10 exposed. The exposed metal interconnection layer 10 is used as bonding pad 20. This contributes to reliable bonding of bonding wires onto the bonding pad.

REFERENCES:
patent: 5938942 (1999-08-01), Yamazaki et al.
patent: 6001539 (1999-12-01), Lyu et al.

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