Etching a substrate: processes – Gas phase etching of substrate
Reexamination Certificate
2007-08-27
2010-11-09
Tran, Binh X (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
C216S022000, C438S003000, C438S689000
Reexamination Certificate
active
07828985
ABSTRACT:
A method of producing a thin film magnetic head includes the steps of: forming a second lower magnetic pole layer in a part on a first lower magnetic pole layer; forming, over the entire wafer surface, an insulating layer so as to be thicker than the thickness of the second lower magnetic pole layer in the stacking direction, the insulating layer being less likely to be etched than the second lower magnetic pole layer; carrying out a planarizing process by CMP on the entire wafer surface until the second lower magnetic pole layer is exposed; forming a concave portion including the second lower magnetic pole layer and the insulating layer by ion beam etching on the entire wafer surface; forming a recording gap layer over the entire wafer surface; and forming a first upper magnetic pole layer in the upper magnetic pole layer so as to fill the concave portion.
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Hirabayashi Hiraku
Ito Yuji
Mizoguchi Yoshiyuki
Oyama Nobuya
Lin Patti
Oliff & Berridg,e PLC
TDK Corporation
Tran Binh X
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