Method of producing temperature compensated reference diodes uti

Details Method of producing temperature compensated reference diodes uti Method of producing temperature compensated reference diodes uti

1975-03-25

1976-04-27

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29573, 29574, 29575, 148191, 357 13, 357 28, 357 37, 357 38, 357 76, H01L 2120, H01L 2356, H01L 2990

Patent

active

039532542

ABSTRACT:
Method of manufacturing temperature compensated zener-type semiconductor devices, made of a zener diode and two forward-biased diodes arranged in series, the three diodes being formed in a single monolithic unit on the two faces of a flat substrate, by an epitaxial technique.

REFERENCES:
patent: 3231796 (1966-01-01), Shombert
patent: 3260900 (1966-07-01), Shombert
patent: 3274400 (1966-09-01), Weinstein
patent: 3278814 (1966-10-01), Rutz
patent: 3375417 (1968-03-01), Hull et al.
patent: 3400306 (1968-09-01), Knauss
patent: 3410735 (1968-11-01), Hackley
patent: 3421055 (1969-01-01), Bean et al.
patent: 3519900 (1970-07-01), Lawrence

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