Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1981-11-19
1982-11-23
Demers, Arthur P.
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
C15C 1500
Patent
active
043604145
ABSTRACT:
Circuit structures consisting of layers composed of metal silicides or metal silicide-polysilicon are produced by reactive sputter etching with sulfur hexafluoride (SF.sub.6) as the etching gas. In a practice of the invention, the etching process occurs in two steps whereby the first etching step is carried out with a high frequency power of more than 0.3 W/cm.sup.2 and the second etching step is carried out with a high frequency power of less than 0.2 W/cm.sup.2. This method is strictly anisotropic, even when a photosensitive resist is used as an etching mask, and is useful in the manufacture of fully integrated semiconductor circuits in MOS technology with metal silicide layers for reduction of the ohmic resistance of polysilicon.
REFERENCES:
patent: 4174251 (1979-11-01), Paschke
patent: 4283249 (1981-08-01), Ephrath
Clark, IBM Technical Disclosure Bulletin vol. 20 (1971), p. 1386.
Curtis et al., J. Electrochem. Soc. 125 (1978), pp. 829-830.
Parrens, J. Vac. Sci. Technol. 19 (1981), pp. 1403-1407.
Chemical Abstracts, vol. 85, (1976) p. 562, paragraphs 85-201113t and 85:201114u.
B. L. Crowder et al., Transactions on Electron Devices, vol. ED-26 (1979), pp. 369-371.
Demers Arthur P.
Siemens Aktiengesellschaft
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