Method of producing structures composed of photosensitive resist

Metal treatment – Compositions – Heat treating

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148187, 156643, 427336, 430312, G03C 500, C03C 1500, C03C 2706

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043766587

ABSTRACT:
Structures composed of photosensitive resist are produced for semiconductor circuits by first generating a mask of a photosensitive resist onto a substrate and then applying a layer of a photosensitive resist over the entire surface of the substrate, including the first generated mask, so that such mask dissociates or dissolves by the material of the subsequently applied layer, which is then structured. In this manner, an improved adhesion of the resist structures to the substrate is achieved and simultaneously cleansing steps are eliminated. The inventive process is utilized for all processes during manufacture of semiconductor circuits wherein at least two photolithographic processes occur without the intervention of a high temperature step.

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patent: 4201800 (1980-05-01), Alcorn et al.
patent: 4253888 (1981-03-01), Kikuchi
Bickford et al., IBM-TDB, 16 (1973) 47.
Kaplan et al., IBM-TDB, 15 (1972) 2239.
S. S. Liu et al, "A High-Performance MOS Technology for 16K Static RAM", IEDM Digest of Technical Papers, (Dec. 1979), pp. 352-354.

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