Method of producing structured layers on a substrate being irrad

Metal treatment – Compositions – Heat treating

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29576B, 29576E, 148175, 250492A, 357 91, H01L 754, H01L 21265

Patent

active

041337026

ABSTRACT:
A monocrystalline layer having select structures therein is deposited on a substrate surface from a gas phase or via a molecular beam while the substrate surface is being irradiated with two coherent particle beams superimposed in relation to one another. The coherent particle beams are comprised of particles having an energy of about 10 keV and the substrate is positioned relative to the particle beams so that a maxima of an interference pattern formed by such particle beams is located on the substrate surface.

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patent: 3999072 (1976-12-01), Takagi
patent: 4035655 (1977-07-01), Guernet et al.
Chang et al., "Smooth . . . Layers of GaAs . . . by MBE", Appl. Phys. Letts. 28 (1976) 39.
Naganuma et al., "Ionized Zn Doping of GaAs Molecular Beam Epitaxial Films", Appl. Phys. Letts. 27 (1975) 342.
Matsunaga et al., "MBE with Ionized Dopant", Electr. Engg. in Japan, 95 (1975) 28-32.

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