Method of producing stripe-structure semiconductor laser

Details Method of producing stripe-structure semiconductor laser Method of producing stripe-structure semiconductor laser

1987-10-29

1990-08-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG95, 148DIG110, 357 17, 437 81, 437133, 437947, 437987, H01L 2120, H01L 21203

Patent

active

049487531

ABSTRACT:
A semiconductor laser and a method of producing the same wherein the semiconductor laser is produced by forming a stripe-shaped projection on the surface of a semiconductor substrate, and forming multilayered thin films with a double heterostructure including an active layer on said semiconductor substrate by using the metal organic chemical vapor phase epitaxial growth method or the molecular beam epitaxial growth method. Thus, a buried stripe-structure semiconductor laser can be produced by a sequence of crystal growth processes.

REFERENCES:
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patent: 4648940 (1987-03-01), Menigaux et al.
Mito et al., "In GaAsP Planar Buried Heterostructure Laser Diode . . . ", Electronics Letters, Jan. 7, 1982, vol. 18, No. 1, pp. 2-3.

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