Method of producing single crystal film utilizing a two-step hea

Details Method of producing single crystal film utilizing a two-step hea Method of producing single crystal film utilizing a two-step hea

1983-01-25

1986-01-21

Saba, William G.

Metal treatment

Compositions

Heat treating

29576E, 29576T, 29578, 148174, 148175, 148DIG1, 148DIG123, 148DIG90, 148DIG3, 156603, 156612, 156DIG73, 156DIG80, 427 531, 427 86, H01L 21263, H01L 21205

Patent

active

045655847

ABSTRACT:
An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.

REFERENCES:
patent: 4319954 (1982-03-01), White et al.
patent: 4323417 (1982-04-01), Lam
patent: 4363769 (1982-12-01), Tsuya et al.
patent: 4381201 (1983-04-01), Sakurai
patent: 4402762 (1983-09-01), John et al.
patent: 4444620 (1984-04-01), Kovacs et al.
patent: 4487639 (1984-12-01), Lam et al.
patent: 4497683 (1985-02-01), Celler et al.
patent: 4498951 (1985-02-01), Tamura et al.
patent: 4500388 (1985-02-01), Ohmura et al.
Roth et al., "Silicon Epitaxy by Solid-Phase Crystallization . . . Amorphous Films", Applied Physics Letters, vol. 31, No. 10, Nov. 15, 1977, pp. 689-691.
Ogirima et al., "Multiwafer Growth System for Low Pressure Silicon Epitaxy", J. Electrochem. Soc., vol. 125, No. 11, Nov. 1978, pp. 1879-1881.
Bosch et al., "Crystallization of Amorphous Silicon on Silica . . . ", Applied Physics Letters, 40(2), Jan. 15, 1982, pp. 166-167.
Bean et al., "Epitaxial Laser Crystallization . . . Amorphous Silicon", Appl. Phys. Lett., 33(3), Aug. 1, 1978, pp. 227-230.
Tsaur et al., "Epitaxial Alignment of Polycrystalline Si . . . ", Appl. Phys. Lett., 37(7), Oct. 1, 1980, pp. 648-651.
Kinney et al., "Method for Producing Single Crystal Silicon . . . ", I.B.M. Tech. Discl. Bull., vol. 24, No. 6, Nov. 1981, pp. 2955-2957.

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