Method of producing silicon carbide powder

Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound

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106 44, C01B 3136

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042268419

ABSTRACT:
A method of producing a silicon carbide powder consisting of fine particles of uniform shape and size, comprising baking at 1,350.degree. to 1,850.degree. C. under a non-oxidizing atmosphere a powdery mixture consisting of 1 part by weight of silica powder or a compound forming silica powder at high temperatures, carbon powder or a compound forming carbon powder at high temperatures, and silicon carbide or a substance forming silicon carbide at high temperatures, the amounts of the silica powder-forming compounds, the carbon powder-forming compounds and the silicon carbide powder-forming substance being determined such that the amounts of the formed powders are equal to those specified above.

REFERENCES:
patent: 3271109 (1966-09-01), Mezey et al.
patent: 3758672 (1973-09-01), Lewis
patent: 3855395 (1974-12-01), Cutler

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