Method of producing silicon carbide epitaxial layer

Details Method of producing silicon carbide epitaxial layer Method of producing silicon carbide epitaxial layer

2011-04-05

2011-04-05

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S200000, C117S951000

Reexamination Certificate

active

07918937

ABSTRACT:
A method of producing an epitaxial layer on a substrate of silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a thickness uniformity that is better than 5% at a growth rate which is at least 100 μm/hour. The method comprises providing a cavity with a source material and a substrate of monolithic silicon carbide, evacuating the cavity and raising the temperature to 1400° C. Then the temperature is increased at a rate of about 20° C./min until a predetermined growth temperature is reached. Thereafter, the temperature is kept such that a predetermined growth rate between 10 μm/min and 300 μm/min is obtained.

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