Method of producing silicon carbide device by cleaning...

Details Method of producing silicon carbide device by cleaning... Method of producing silicon carbide device by cleaning...

2001-09-05

2003-07-08

Hiteshew, Felisa (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S097000, C438S268000, C438S273000

Reexamination Certificate

active

06589337

ABSTRACT:

CROSS REFERENCE TO RELATED APPLICATIONS
This application is based upon and incorporates herein by reference Japanese Patent Application No. 2000-273584 filed on Sep. 8, 2000.
BACKGROUND OF THE INVENTION
This invention relates to a method of producing a silicon carbide (SiC) device using a cleaned surface of a SiC substrate.
U.S. Pat. No. 6,214,107 discloses a method of cleaning a SiC substrate by etching process used in a silicon (Si) process. For example, buffered hydrofluoric acid process is used as follows. A surface of a SiC substrate is etched with a mixture solution of a hydrofluoric acid and an aqueous solution including ammonium fluoride of 40 vol.wt % (e.g., hydrofluoric acid:aqueous solution including ammonium fluoride of 40 vol.wt %=1:6).
In this method, however, carbon and the like in atmospheric air adhere to the surface of the SiC substrate while the SiC substrate is transferred. Actually, a composition on the surface of the SiC substrate obtained by this method is found to have a carbon cluster when analyzed by using X-ray photo electron spectroscopy (XPS).
SUMMARY OF THE INVENTION
The present invention has been made in view of the above problems. An object of the present invention is to prevent a cleaned surface of a Sic substrate from being contaminated by carbon and the like in atmospheric air so that a satisfactory SiC device can be produced.
According to the present invention, a SiC device is produced as follows. First, a silicon layer is formed on a surface of a Sic substrate. Then, the silicon layer is removed from the surface of the SiC substrate by supplying oxygen gas to the silicon layer in a high ambient temperature and a low oxygen pressure. The pressure is set at 1×10
−2
to 1×10
−6
Pa. Thus, contamination of the surface of the SiC substrate by carbon and the like in atmospheric air can be removed. Specifically, the silicon layer has 3×3 surface structure, and the surface of the SiC substrate is cleaned to have 1×1 surface structure.
Preferably, the oxygen pressure and temperature are set at about 10
−6
Pa and 1000° C. for removing the silicon layer. Thereafter, the oxygen pressure is raised to about 10
4
Pa to form an oxide film on the silicon carbide film.


REFERENCES:
patent: 6214107 (2001-04-01), Kitabatake
patent: A-2001-35838 (2001-02-01), None
Aoyama et al., Meeting Abstracts of the Physical Society of Japan, vol. 55, Issue 1, Part 4 pp. 561-871, Mar. 22-25, 2000.

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