Method of producing silicon carbide-based bodies

Details Method of producing silicon carbide-based bodies Method of producing silicon carbide-based bodies

1989-11-03

1991-04-16

Dean, R.

Stock material or miscellaneous articles

All metal or with adjacent metals

Laterally noncoextensive components

501 91, C04B 3556

Patent

active

050081594

ABSTRACT:
Silicon carbide-based bodies are produced by forming a porous compact of silicon carbide, a carbide of a metal, and carbon, and infiltrating the compact with a molten mixture comprising the metal and silicon. The metal may be selected from: titanium, zirconium, hafnium, molybdenum, niobium, tantalum, tungsten, and vanadium, and the infiltration temperature may be between 1900.degree. C. and 2100.degree. C.

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Messner et al., "Processing of Reaction-Bonded Silicon Carbide Without Residual Silicon Phase", Ceramic Engineering Science Proceedings, vol. 9, No. 7-8, pp. 1052-1060, Oct. 24, 1988.

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