Method of producing silicon carbide base sintered material conta

Plastic and nonmetallic article shaping or treating: processes – Including step of generating heat by friction

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264125, 264126, 501 88, 423345, F27B 904

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046631054

ABSTRACT:
In producing a SiC base sintered material containing a small amount of B as a sintering assistant, a boron-containing organic compound obtained by reaction between a boron compound and an uncross-linked phenolic resin, either a resol or a novolac, is used instead of using an elemental boron powder. The starting boron compound is, e.g., H.sub.3 BO.sub.3, BCl.sub.3 or (C.sub.2 H.sub.5).sub.2 BOH. A mixture comprising 100 parts by weight of SiC powder and 2-10 parts by weight of the boron-containing organic compound is compacted or molded into a desired shape, and the shaped material is heated in a nonoxidizing atmosphere first at a relatively low temperature to accomplish thermal decomposition of the boron-containing compound and then at a sufficiently high temperature such as 1800.degree.-2200.degree. C. to accomplish sintering of SiC. By this method agglomeration of boron in the sintered material is prevented, so that sound sintering is achieved in every region of the shaped material. Accordingly the products of this method are high in reliability as to mechanical strength.

REFERENCES:
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patent: 4124667 (1978-11-01), Coppola et al.
patent: 4224073 (1980-09-01), Sasaki et al.
patent: 4502983 (1985-03-01), Omori et al.
patent: 4569921 (1986-02-01), Omori et al.
"Chemical Abstracts", vol. 97, 1982, p. 310.

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