Method of producing silicon carbide

Details Method of producing silicon carbide Method of producing silicon carbide

1986-04-08

1987-10-27

Doll, John

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

423439, C01B 3136

Patent

active

047029005

ABSTRACT:
In a method of producing silicon carbide by heating starting materials comprising siliceous material and carbonaceous material in a non-oxidizing atmosphere, those ingredients contained in gases evolved upon heating and solidified at a low temperature into impurities for silicon carbide are eliminated from the atmosphere during heating.

REFERENCES:
patent: 4504453 (1985-03-01), Tanaka et al.
patent: 4536379 (1985-08-01), Carlson et al.

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