Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Patent
1994-04-14
1996-08-27
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having moving solid-liquid-solid region
117 7, 117 9, 117 10, 117 44, 117 45, 117952, 117956, C30B 1318
Patent
active
055497470
ABSTRACT:
A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
REFERENCES:
patent: 2922903 (1961-07-01), Imber
patent: 3031275 (1962-04-01), Shockley
patent: 3112997 (1963-12-01), Bezring et al.
patent: 3133336 (1964-05-01), Marinace
patent: 3172778 (1965-03-01), Gunther et al.
patent: 3186880 (1965-06-01), Skaggs et al.
patent: 3247576 (1966-04-01), Dill et al.
patent: 3336159 (1967-08-01), Liebson
patent: 3341376 (1967-09-01), Sperke et al.
patent: 3370980 (1968-02-01), Anderson
patent: 3372069 (1968-03-01), Bailey et al.
patent: 3425879 (1969-02-01), Shaw et al.
patent: 3549432 (1970-12-01), Silversten
patent: 3634150 (1972-06-01), Horn
patent: 3816906 (1974-06-01), Falckenberg
patent: 3884733 (1975-05-01), Bean
patent: 3900943 (1975-08-01), Sirtl et al.
patent: 4027053 (1977-05-01), Lesk
patent: 4046618 (1977-09-01), Chaudhari et al.
patent: 4053350 (1977-10-01), Olsen et al.
patent: 4116751 (1978-09-01), Zaromb
patent: 4168998 (1979-09-01), Hasegawa et al.
patent: 4270960 (1981-06-01), Bollen et al.
patent: 4309225 (1982-01-01), Fan et al.
patent: 4323417 (1982-04-01), Lam
patent: 4371421 (1983-02-01), Fan et al.
patent: 4381201 (1983-04-01), Sakurai
patent: 4444620 (1984-03-01), Kovacs et al.
patent: 4461670 (1984-07-01), Celler et al.
patent: 4494303 (1985-01-01), Celler et al.
patent: 4522661 (1985-06-01), Morrison et al.
patent: 4565584 (1986-01-01), Tamura et al.
patent: 4592799 (1986-06-01), Hayafugi
patent: 4670086 (1987-01-01), Leany et al.
patent: 4670088 (1987-06-01), Tsur et al.
Ven Meuench, "Producing Semiconductor Devices By Oriented Lateral Overgrowth" IBM Technical Bulletin, vol. 10 No. 10 Mar. 1968.
Taush et al, "A Novel Crystal Growth Phenomenon; Single Crystal GaAs OverGrowth onto Silicon Dioxide", J. Electrochemical Society, vol. 112, No. 7 Jul. 1965.
IEEE Photovoltaic Specialist Conf.: "Peeled Film Technology for Solar Cells", A. G. Milnes, D. L. Feucht, 1975, pp. 338-341.
Journal of the Electrochemical Society: "Selective Epitaxial Deposition of Gallium Arsenide in Holes", Don W. Shaw, Sep. 1966, pp. 904-908.
Solar Energy: Review Paper: "Solar Cells for Terrestrial Applications", Harold J. Hovel, vol. 19, 1977, pp. 605-615.
Abstract No. 224: "Thin Film GaAlAs-GaAs Solar Cells by Peeled Film Technology", by Makoto Konagai & Kiyoshi Takahasi, pp. 554-555.
"A Novel Crystal Growth Phenomenon: Single Crystal GaAs Overgrowth onto Silicon Dioxide", F. W. Tausch, Jr. & A. G. Lapierre, III vol. 112, No. 7, pp. 706-709.
Applied Physics Letters; "Lateral Epitaxy by Seeded Solidification for Growth of Single-Crystal Si Films on Insulators"; by Fan et al vol. 38, No. 5, Mar. 1, 1981; pp. 365-367.
IEEE Photovoltaic Specialist Conf.: "A Nonconventional Approach to Thin Film Cell Fabrication", Kirkpatrick et al., Jun. 5-8, 1978 pp. 1342-1346.
Bozler Carl O.
Fan John C. C.
McClelland Robert W.
Kunemund Robert
Massachusetts Institute of Technology
LandOfFree
Method of producing sheets of crystalline material and devices m does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing sheets of crystalline material and devices m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing sheets of crystalline material and devices m will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1053755