Method of producing sheets of crystalline material

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156612, 156DIG84, 156DIG88, 357 4, 437 2, 437 82, 437 86, 437249, 437927, 437962, 437966, 437974, H01L 2120, H01L 21302

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047270470

ABSTRACT:
A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is separated, and the substrate can optionally be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.

REFERENCES:
patent: 2992903 (1961-07-01), Imber
patent: 3031275 (1962-04-01), Shockley
patent: 3112997 (1963-12-01), Berzing et al.
patent: 3133336 (1964-05-01), Marinace
patent: 3172778 (1965-03-01), Gunther et al.
patent: 3186880 (1965-06-01), Skaggs et al.
patent: 3247576 (1966-04-01), Dill et al.
patent: 3341376 (1967-09-01), Sperke et al.
patent: 3370980 (1968-02-01), Anderson
patent: 3372069 (1968-03-01), Bailey et al.
patent: 3425879 (1969-02-01), Shaw et al.
patent: 3634150 (1972-01-01), Horn
patent: 3816906 (1974-06-01), Falckenberg
patent: 3884733 (1975-05-01), Bean
patent: 3900943 (1975-08-01), Sirtl et al.
patent: 4027053 (1977-05-01), Lesk
patent: 4053350 (1977-10-01), Olsen et al.
patent: 4116751 (1978-09-01), Zaromb
patent: 4168998 (1979-09-01), Hasegawa et al.
Tausch et al., "Novel Crystal Growth-GaAs--Onto Silicon Dioxide", J. Electrochem. Soc., vol. 112, No. 7, Jul. 1965, pp. 706-709.
Von Muench, W., "Producing . . . Oriented Lateral Overgrowth", I.B.M. Tech. Discl. Bull., vol. 10, No. 10, Mar. 1968, pp. 1469-1470.
Kirkpatrick et al., "Nonconventional--Thin Film Fabrication", Conf. Record, 13th IEEE Photovoltaic Sp. Conf., Jun. 1978, pp. 1342-1346.
IEEE Photovoltaic Specialist Conf.: "Peeled Film Technology for Solar Cells", A. G. Milnes, D. L. Feucht, 1975, pp. 338-341.
Journal of the Electrochemical Society: "Selective Epitaxial Deposition of Gallium Arsenide in Holes", Don W. Shaw, 9/66, pp. 904-908.
Solar Energy: Review Paper: "Solar Cells for Terrestrial Applications," Harold J. Hovel, vol. 19, 1977, pp. 605-615.
Abstract No. 224: "Thin Film GaAlAs-GaAs Solar Cells by Peeled Film Technology," by Makoto Konagai & Kiyoshi Takahashi, pp. 554-555.
"A Novel Crystal Growth Phenomenon: Single Crystal GaAs Overgrowth onto Silicon Dioxide," F. W. Tausch, Jr. & A. G. Lapierre, III, vol. 112, No. 7, pp. 706-709.

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