Method of producing semiconductor wafers

Abrading – Abrading process – Glass or stone abrading

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451 11, 451 65, 451 69, 125 1301, B24B 4910

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059759909

ABSTRACT:
A method for producing semiconductor wafers is by a repeated sequence of grinding the end face of a monocrystal using a grinding tool and cutting a semiconductor wafer having a thickness from the monocrystal using a cutting tool, a grinding abrasion of a specified depth being produced during grinding and the semiconductor wafer being cut in a cutting plane which is as parallel as possible to the ground end face. The method includes (a) simultaneously grinding a part of the surface of an auxiliary body, to produce a ground surface of the auxiliary body and the end face of the monocrystal lying substantially in one plane and the thickness of the material abraded from the auxiliary body by grinding being substantially equal to the grinding abrasion; (b) cutting into the auxiliary body in the cutting plane using the cutting tool and producing a cut section which has a ground part and an unground part, and (c) determining the grinding abrasion, either (1) as the distance between the ground surface of the auxiliary body and the surface of the auxiliary body before grinding, or (2) as the difference in the thickness of the cut section in the unground part and the thickness of the semiconductor wafer.

REFERENCES:
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patent: 4227348 (1980-10-01), Demers
patent: 4844047 (1989-07-01), Brehm et al.
patent: 4967461 (1990-11-01), Feldmeier
patent: 4991475 (1991-02-01), Malcok et al.
patent: 5025593 (1991-06-01), Kawaguchi et al.
patent: 5329733 (1994-07-01), Steere, Jr.
patent: 5458526 (1995-10-01), Tsukada et al.
Patent Abstracts of Japan, vol. 007, No. 012 (M-186), Jan. 19, 1983 & JP58854 A (Toukyiou Seimitsu: KK).

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