Method of producing semiconductor substrate having an SOI...

Details Method of producing semiconductor substrate having an SOI... Method of producing semiconductor substrate having an SOI...

2011-05-31

2011-05-31

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S455000, C438S458000, C438S475000, C438S526000, C438S530000, C257SE21561, C257SE21567, C257SE21568, C257SE21570

Reexamination Certificate

active

07951692

ABSTRACT:
There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

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