Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1993-05-14
1995-07-18
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 84, 437 69, C30B 2502
Patent
active
054331684
ABSTRACT:
The present invention relates to a method of producing a semiconductor substrate which is suitable for an electronic device or an integrated circuit in the form of dielectric separation or having a single crystal semiconductor layer formed on an insulator.
The method comprises the steps of making a silicon substrate porous, forming a silicon single crystal on the porous substrate and oxidizing the porous silicon substrate to form a semiconductor layer having good crystallinity on an insulating support, particularly a support having light transmission.
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Breneman R. Bruce
Canon Kabushiki Kaisha
Garrett Fehisa
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