Method of producing semiconductor substrate

Details Method of producing semiconductor substrate Method of producing semiconductor substrate

1992-10-09

1993-10-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437974, 148DIG12, 148DIG135, 148DIG150, H01L 2176

Patent

active

052504603

ABSTRACT:
A method of producing a semiconductor substrate, comprises the steps of: forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate; sticking a supporting substrate to the surface of the epitaxial layer of single-crystal silicon by using an adhesive; selectively etching the porous single-crystal silicon substrate; sticking the epitaxial layer fast to a transparent insulating substrate containing SiO.sub.2 as a main constituent; separating the supporting layer from the epitaxial layer by removing the adhesive; and heat-treating the epitaxial layer stuck fast on the transparent insulating layer. Alternatively, a porous layer is formed in a surface portion of a single-crystal silicon substrate, and then, the non-porous portion is removed before the porous layer is selectively etched.

REFERENCES:
patent: 4983539 (1991-01-01), Yamagata et al.
patent: 5070034 (1991-12-01), Satoh et al.
Journal of Crystal Growth vol. 63, No. 3, pp. 547-553, Oct. 11, 1983, Kazuo Imai et al., "Crystalline Quality of Silicon Layer Formed by Fipos Technology".
T. Hamaguchi et al., "Device Layer Transfer Technique Using Chemi-Mechanical Polishing", Japanese Journal of Applied Physics, vol. 23, No. 10, Oct. 1984, pp. L815-L817.
L. Vescan et al., "Low-Pressure Vapor-Phase Epitaxy of Silicon On Porous Silicon," Materials Letters, vol. 7, No. 3, Sep. 1988, pp. 94-98.
Patent Abstracts of Japan, vol. 004, No. 044 (E-005) Apr. 5, 1980 & JP-A-55 016 464 (NEC Corp.) Feb. 5, 1980.
Tsao, "Buried Insulators and/or Conductors in Single-Crystal Silicon Using Porous Silicon Techniques", Mat. Res. Soc. Symp. Proc. vol. 107, 1988 Materials Research Society; pp. 429-440.

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