Method of producing semiconductor optical device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S041000, C438S507000, C257SE21131

Reexamination Certificate

active

07816157

ABSTRACT:
The invention discloses a method of producing on a substrate a semiconductor optical device having a laser diode and an EA optical modulator. An etched side face of a first semiconductor portion is formed. Then, for example, a first optical confinement layer and an active layer both for the EA optical modulator are grown by the metal organic vapor phase epitaxy method. The first optical confinement layer is grown by supplying hydrogen chloride in addition to a material gas. When the first optical confinement layer is grown, the formation of a thick semiconductor layer along the etched side face, which is an abnormally grown semiconductor layer, is decreased. Subsequently, the active layer for the EA optical modulator is grown. This method can suppress the active layer for the EA optical modulator from bending caused by the abnormally grown semiconductor layer.

REFERENCES:
patent: 6790697 (2004-09-01), Kobayashi et al.
patent: 7125735 (2006-10-01), Takeuchi
patent: 7596160 (2009-09-01), Tsuchiya et al.
patent: 2009/0087966 (2009-04-01), Watatani et al.
K. Hinzer et al., Technical Digest of Optical Fiber Communication, 2003, FG7. pp. 684-685.

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