Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2009-02-03
2010-10-19
Quach, Tuan N. (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S041000, C438S507000, C257SE21131
Reexamination Certificate
active
07816157
ABSTRACT:
The invention discloses a method of producing on a substrate a semiconductor optical device having a laser diode and an EA optical modulator. An etched side face of a first semiconductor portion is formed. Then, for example, a first optical confinement layer and an active layer both for the EA optical modulator are grown by the metal organic vapor phase epitaxy method. The first optical confinement layer is grown by supplying hydrogen chloride in addition to a material gas. When the first optical confinement layer is grown, the formation of a thick semiconductor layer along the etched side face, which is an abnormally grown semiconductor layer, is decreased. Subsequently, the active layer for the EA optical modulator is grown. This method can suppress the active layer for the EA optical modulator from bending caused by the abnormally grown semiconductor layer.
REFERENCES:
patent: 6790697 (2004-09-01), Kobayashi et al.
patent: 7125735 (2006-10-01), Takeuchi
patent: 7596160 (2009-09-01), Tsuchiya et al.
patent: 2009/0087966 (2009-04-01), Watatani et al.
K. Hinzer et al., Technical Digest of Optical Fiber Communication, 2003, FG7. pp. 684-685.
Quach Tuan N.
Smith , Gambrell & Russell, LLP
Sumitomo Electric Industries Ltd.
LandOfFree
Method of producing semiconductor optical device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing semiconductor optical device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing semiconductor optical device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4153214