Method of producing semiconductor optical device

Details Method of producing semiconductor optical device Method of producing semiconductor optical device

2011-06-07

2011-06-07

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Groove formation

C257SE21090, C257SE21461

Reexamination Certificate

active

07955880

ABSTRACT:
A method of producing a semiconductor optical device includes a first step of growing a stacked semiconductor layer including a first III-V group compound semiconductor layer for an active layer on a substrate; a second step of forming a silicon oxide film on the stacked semiconductor layer, the silicon oxide film having a predetermined film stress and a predetermined thickness; a third step of forming a strip-shaped groove in the silicon oxide film by etching the silicon oxide film, using a resist pattern formed on the silicon oxide film, until a surface of the stacked semiconductor layer is exposed; and a fourth step of growing a second III-V group compound semiconductor layer in the groove using the silicon oxide film as a selective mask.

REFERENCES:
patent: 2003/0218179 (2003-11-01), Koide et al.
patent: 2006/0084245 (2006-04-01), Kohda
Peng et al.; “Low-Cost and High-Performance 1.3-μm A1GaInAs-InP Uncooled Laser Diodes”; IEEE Photonics Technology Letter; vol. 18; No. 12; Jun. 15, 2006.

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