Method of producing semiconductor-on-insulator structure by beso

Details Method of producing semiconductor-on-insulator structure by beso Method of producing semiconductor-on-insulator structure by beso

1991-07-11

1993-07-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 21, 437 86, 437974, 437228, 257506, 148DIG12, H01L 2176, H01L 21265

Patent

active

052310450

ABSTRACT:
A method of producing a semiconductor-on-insulator structure generates a first fixed charge in an insulator layer of a base substrate. An active substrate which is made of a semiconductor is bonded on the insulator layer of the base substrate to thereby generate a second fixed charge at an interface of the insulator layer and the active substrate. The first and second fixed charges have mutually opposite polarities. A portion of the active substrate is removed to form the active substrate to an arbitrary thickness.

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