Method of producing semiconductor memory device with buried barr

Details Method of producing semiconductor memory device with buried barr Method of producing semiconductor memory device with buried barr

1989-08-22

1992-05-26

Thomas, Tom

Fishing, trapping, and vermin destroying

437 26, 437 27, 437 28, 437 47, 437 48, 437 60, H01L 2170

Patent

active

051167751

ABSTRACT:
A heavily-doped semiconductor region and a channel stopper region, which are disposed under a memory cell in a memory cell region, are simultaneously formed after formation of a field insulator film, thereby preventing the channel stopper region from oozing out into the channel region, and thus obtaining a semiconductor memory device which is resistant to .alpha.-rays and therefore free from soft errors caused by .alpha.-rays. Also disclosed is a method of producing said semiconductor memory device.

REFERENCES:
patent: 4326329 (1982-04-01), McElnoy
patent: 4352236 (1982-10-01), McCollum
patent: 4388121 (1983-06-01), Rao

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