Fishing – trapping – and vermin destroying
Patent
1986-11-26
1987-12-29
Ozaki, George T.
Fishing, trapping, and vermin destroying
437107, 437129, 437133, 437162, 437167, 372 47, H01L 21203, H01L 21223, H01L 21225, H01L 21265
Patent
active
047161256
ABSTRACT:
A compound semiconductor laser comprises a semi-insulating substrate, a lower clad layer, an MQW active layer, an upper clad layer, and two electrodes on the top surface thereof. The upper clad layer is formed so as to have a property of reducing the diffusion coefficient of impurities, from the lower portion toward the upper portion thereof. Impurity atoms are thermally diffused into the lower clad layer from the top surface thereof to form an N-type region and a P-type region, respectively. The side diffusion fronts of the N- and P-type regions are nearly vertical, and thus a narrow MQW active region is defined by disordered portions of the MQW active layer in the N- and P-type regions. The light and carriers are effectively confined in the narrow active region by using the vertical and transverse double-heterostructures and refractive index differences.
REFERENCES:
patent: 4261771 (1981-04-01), Dingle et al.
patent: 4378255 (1983-03-01), Holonyak, Jr. et al.
patent: 4511408 (1985-04-01), Holonyak, Jr.
patent: 4602370 (1986-07-01), Tsang
patent: 4647953 (1987-03-01), Okajima et al.
patent: 4670966 (1987-06-01), De Poorter et al.
patent: 4671830 (1987-06-01), Burnham
G. H. B. Thompson, Physics of Semiconductor Laser Devices, Wiley, 1980, p. 296.
Fujitsu Limited
Ozaki George T.
LandOfFree
Method of producing semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing semiconductor laser will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-463048