Method of producing semiconductor integrated circuit device havi

Details Method of producing semiconductor integrated circuit device havi Method of producing semiconductor integrated circuit device havi

1993-12-10

1996-02-13

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437913, H01L 2144

Patent

active

054911087

ABSTRACT:
A method which can markedly improve the flatness of a semiconductor integrated circuit device by forming selectively a layer insulating film on an underlying substrate having level differences is disclosed. First, a Ti--W alloy film is formed on a member which brings about level differences due to wirings or the like, then a PECVD silicon oxide film is formed followed by a plasma treatment using CF.sub.4 gas. Further, a silicon oxide film is deposited by atmospheric pressure CVD using ozone and tetraethoxysilane. Then, the surface is flattened by etchback using an organic SOG film, and a silicon oxide film is formed by plasma excited CVD.

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