Method of producing semiconductor element

Details Method of producing semiconductor element Method of producing semiconductor element

2011-08-16

2011-08-16

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S700000, C438S701000, C438S706000, C438S711000, C438S712000, C438S713000, C438S723000, C438S737000, C438S738000, C438S739000, C438S744000, C438S745000, C438S748000, C438S749000, C438S757000, C257SE21249, C257SE21252, C257SE21255, C257SE21256, C257SE21267

Reexamination Certificate

active

07998876

ABSTRACT:
A method of producing a semiconductor element includes the steps of forming a wiring portion layer on a substrate; forming an interlayer insulation layer over the substrate and the wiring portion layer, in which a third insulation film, a second insulation film, and a first insulation film are laminated in this order from the substrate; forming a mask pattern on the first insulation film; removing a contact hole forming area of the first insulation film through a wet etching process; removing a contact hole forming area of the second insulation film through an etching process; removing a contact hole forming area of the third insulation film through an etching process; and a contact hole forming step of forming a contact hole in the interlayer insulation layer so that a surface of the wiring portion layer is exposed.

REFERENCES:
patent: 4889588 (1989-12-01), Fior
patent: 2002/0001875 (2002-01-01), Hermes et al.
patent: 05-343347 (1993-12-01), None
patent: 07-094441 (1995-04-01), None

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