Method of producing semiconductor displacement transducer

Details Method of producing semiconductor displacement transducer Method of producing semiconductor displacement transducer

1980-07-07

1982-03-16

Walton, Donald L.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 29610SG, 338 2, H01L 2158

Patent

active

043193978

ABSTRACT:
A strain gauge is formed on one main surface of a semiconductor single crystal substrate while an insulating oxide film is formed on the other main surface of the substrate. A metal junction layer including several layers inclusive of eutectic alloy layers is formed on the surface of the insulating oxide film and the thus prepared structure is mounted on a metal strain generator. By heating this assembly to temperatures approximating to the eutectic point of the eutectic alloy layer, the semiconductor substrate and the metal strain generator are joined together.

REFERENCES:
patent: 3197335 (1965-07-01), Leszynski
patent: 3451030 (1969-06-01), Garfinkel
patent: 4151502 (1979-04-01), Kurihara et al.
patent: 4176443 (1979-12-01), Jannuzzi et al.

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