Method of producing semiconductor devices

Details Method of producing semiconductor devices Method of producing semiconductor devices

2007-05-08

2007-05-08

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S400000, C438S430000, C438S431000, C438S435000, C438S437000, C438S787000, C257SE21546

Reexamination Certificate

active

10607216

ABSTRACT:
A method of producing semiconductor devices is provided, which makes it possible to bury a silicon oxide without shape deterioration in device isolation trenches. The method comprises the steps of: forming an etching resistive mask over a semiconductor substrate; etching the semiconductor substrate through an opening in the etching resistive mask to form a device isolation trench; forming a coat of a silazane perhydride polymer solution over the semiconductor substrate having the device isolation trench formed therein; vaporizing a solvent from the coat and then subjecting the coat to chemical reaction to form a film of silicon oxide; removing said film of the silicon oxide leaving a residue inside said device isolation trench; and heating said silicon oxide left in said device isolation trench for densification.

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Decision of Rejection issued by the Japanese Patent Office mailed Feb. 28, 2006, for Japanese Application No. 2002-056799, and English-language translation thereof.
Notification of Reasons for Rejection issued by the Japanese Patent Office mailed Nov. 16, 2004, for Japanese Application No. 2002-056799, and English-language translation thereof.

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