Method of producing semiconductor devices

Details Method of producing semiconductor devices Method of producing semiconductor devices

1978-12-13

1980-07-01

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

148187, 148 15, 156628, 156644, 156653, 1566591, 427 93, 427 94, H01L 2138

Patent

active

042106893

ABSTRACT:
Semiconductor devices are produced by forming a first insulation film of a relatively high density on a semiconductor substrate having a first semiconductor region formed therein in advance, said first insulation film covering said first semiconductor region, and forming a second insulation film of a relatively low density on the first insulation film. The second insulation film is provided with at least one hole, and the second insulation film is densified to a level substantially equal to that of the first insulation film. Then the exposed portion of the first insulation film is provided with at least one opening with a nitride film used as a mask, and an impurity is diffused through the opening into the first semiconductor region to form therein a second semiconductor region.

REFERENCES:
patent: 4110125 (1978-08-01), Beyer
patent: 4131497 (1978-12-01), Feng et al.
Cuomo et al., "Growth of a Self-Aligned Gate FET Structure by Selective Refractory Metal Deposition" IBM TDB., vol. 14, No. 5, Oct. 1971 (427-494).

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