Fishing – trapping – and vermin destroying
Patent
1995-09-12
1997-12-09
Bowers, Jr., Charles L.
Fishing, trapping, and vermin destroying
437 31, 437 97, 437 95, 437931, 117 96, 148 7, 148 18, H01L 21266
Patent
active
056960042
ABSTRACT:
A method of producing a semiconductor device having a high concentration N-type buried layer on a P-type silicon substrate, the buried layer being covered with a P-type silicon epitaxial layer. The method comprises forming a P-type high concentration layer at a surface portion of the silicon substrate in a region in which no N-type buried layer is to be formed, thereby preventing an inversion layer from being formed at the boundary between the silicon substrate and the epitaxial layer.
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Bowers Jr. Charles L.
Nissan Motor Co,. Ltd.
Radomsky Leon
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