Method of producing semiconductor device using dummy gate struct

Details Method of producing semiconductor device using dummy gate struct Method of producing semiconductor device using dummy gate struct

1991-03-18

1993-11-23

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437203, 437228, 437912, H01L 2960, H01L 2128

Patent

active

052643824

ABSTRACT:
A method of producing a semiconductor device (MESFET) which includes the following steps (a) to (h): (a) forming a trapezium dummy gate, which is made of a first insulating material (SiO.sub.2) and has two normal slopes, on a semiconductor substrate (of a compound semiconductor); (b) selectively forming ohmic electrodes, coming in contact with the dummy gate, on the semiconductor substrate; (c) forming an element isolation region in the semiconductor substrate; (d) forming an insulating film of a second insulating material (Si.sub.3 N.sub.4), different from the first insulating material, over the entire surface; (e) selectively removing projected portions of the dummy gate and insulating film to make a flat portion composed of the remaining dummy gate and insulating film; (f) removing the dummy gate to form an opening having two reverse slopes; (g) forming a sidewall portion of a third insulating material (SiO.sub.2), which is different from the second insulating material, on the reverse slopes of the opening to form a gate opening corresponding to a narrower gate length; and (h) forming a gate electrode to thereby fill the gate opening.

REFERENCES:
patent: 4729967 (1988-03-01), Armiento
patent: 4774206 (1988-09-01), Willer

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