Method of producing semiconductor device using a hydrogen-enrich

Details Method of producing semiconductor device using a hydrogen-enrich Method of producing semiconductor device using a hydrogen-enrich

1993-06-16

1994-11-29

Quach, T. N.

Fishing, trapping, and vermin destroying

437 24, 437978, 156653, 1566591, 156644, H01L 21302, H01L 2131

Patent

active

053690613

ABSTRACT:
A method of producing a semiconductor device whereby it is possible to carry out anisotropic dry etching of a contact hole without generating dimensional losses even though a resist pattern has an inversely tapered cross-sectional shape. If the resist pattern is formed by using a chemical amplification negative resist material which is expected to be applied to excimer laser lithography, the resist pattern tends to have an inversely tapered cross-sectional shape due to resolution mechanism thereof. Thus, a hydrogen-enriched layer is formed in advance on a surface of a silicon oxide interlayer insulation film, and hydrogen released during etching is utilized for promoting deposition of carbonaceous polymer which is an etching reaction product. The carbonaceous polymer is deposited on a sidewall surface of the resist pattern and corrects an apparent cross-sectional shape into a vertical wall state. Therefore, diffusion of incident ion on an edge portion of the resist pattern can be prevented. The hydrogen-enriched layer can be formed, either by depositing silicon oxide, silicon nitride, amorphous silicon and the like in a CVD method, or by ion implantation of hydrogen into the silicon oxide interlayer insulation film.

REFERENCES:
patent: 4705596 (1987-11-01), Gimpelson et al.
patent: 4705597 (1987-11-01), Gimpelson et al.
patent: 5034091 (1991-07-01), Trask et al.

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