Method of producing semiconductor device including Schottky barr

Details Method of producing semiconductor device including Schottky barr Method of producing semiconductor device including Schottky barr

1994-05-10

1995-12-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437175, 437200, 148DIG139, 148DIG140, 257471, 257474, 257483, 257484, H01L 21265

Patent

active

054787645

ABSTRACT:
A method of producing a semiconductor device including a Schottky barrier diode (SBD) comprising the steps of: selectively forming an insulating layer having a first contact hole and a second contact hole, on a (100) silicon semiconductor substrate; selectively forming a polysilicon layer extending from the first contact hole to the second contact hole, the polysilicon layer having a viahole within the first contact hole for selectively exposing the silicon semiconductor substrate; and selectively depositing a refractory metal (tungsten or molybdenum) layer on the polysilicon layer and an exposed portion of the substrate within the viahole by a selective CVD process, so that the SBD is formed between the exposed portion and the metal layer. The refractory metal layer is formed on the silicon of the exposed portion of the substrate and the polysilicon layer and is not formed on the insulating layer, and thus it is unnecessary to perform a photolithography process for patterning the refractory metal layer.

REFERENCES:
patent: 4254428 (1981-03-01), Feth et al.
patent: 4379832 (1983-04-01), Dalal et al.
patent: 4619035 (1986-10-01), Holta et al.
patent: 4638400 (1987-01-01), Brown et al.
patent: 4724223 (1988-02-01), Ditchek
patent: 4862244 (1989-08-01), Yamagishi
patent: 4985372 (1991-01-01), Narita
N. G. Anantha et al., "A Schottky Barrier Diode with Very Narrow Self-Aligned Guard Ring," Extended Abstracts, vol. 82-2, Oct. 1982, Princeton, N.J., pp. 270-271.
Ghandhi, "VLSI Fabrication Principles" Sarah K. Ghandi, pp. 437-439, 1983.

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