Method of producing semiconductor device having radiation part m

Details Method of producing semiconductor device having radiation part m Method of producing semiconductor device having radiation part m

1993-09-14

1995-06-13

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437209, 437220, 437248, 437902, 26427217, H01L 2160

Patent

active

054242517

ABSTRACT:
A semiconductor device includes a stage having top and bottom surfaces, a semiconductor element which is mounted on the top surface of the stage, a package part which is made of a first resin and encapsulates the semiconductor element so that a surface of the package part and the bottom surface of the stage lie on substantially the same plane, and a radiation part which is made of a second resin and is provided directly on the bottom surface of the stage and the surface of the package part. The second resin includes a filler material selected from a group consisting of metal powders and insulator powders so that a thermal conduction of the second resin is greater than that of the first resin.

REFERENCES:
patent: 4835598 (1989-05-01), Higuchi et al.
patent: 4884631 (1989-12-01), Rippel
patent: 5057903 (1991-10-01), Olla
patent: 5108955 (1992-04-01), Ishida et al.
patent: 5147821 (1992-09-01), McShane et al.
patent: 5151777 (1992-09-01), Akin et al.
patent: 5179039 (1993-01-01), Ishida et al.
patent: 5244838 (1993-09-01), Casati et al.
patent: 5249101 (1993-09-01), Frey et al.
patent: 5254500 (1993-10-01), AuYeung
patent: 5296740 (1994-03-01), Sono et al.
patent: 5344795 (1994-09-01), Hashemi et al.
Patent Abstracts of Japan, vol. 7, No. 144, Jun. 23, 1983, p. 53 E 183; JP-A-58 56 445, (Nippon Denki).
Patent Abstracts of Japan, vol. 13, No. 394, Aug. 31, 1989, p. 118 C 631; JP-A-01 139 648 (Fujitsu).

Affiliated with

Also associated with

Rating

Method of producing semiconductor device having radiation part m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing semiconductor device having radiation part m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing semiconductor device having radiation part m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1309130