Method of producing semiconductor device having multilayer condu

Details Method of producing semiconductor device having multilayer condu Method of producing semiconductor device having multilayer condu

1986-11-10

1989-03-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 20419217, 20419225, H01L 21441

Patent

active

048164240

ABSTRACT:
A triple-layer electrode structure or a multilayer interconnecting structure of a semiconductor device comprising a contact (a lower conductive) layer of aluminum or its alloy which comes into contact with a silicon substrate, a barrier layer of refractory metal nitride (e.g. titanium nitride) and refractory metal (e.g., tungsten), and a (upper) conductive layer of aluminum or its alloy. The TiN-W barrier layer prevents overdissolution of silicon into aluminum in spite of heat-treatment at a relatively elevated temperature. The barrier layer is formed by sintering a mixture of refractory metal nitride powder and refractory metal powder to form a target which is sputter deposited on the contact layer in an atomsphere excluding gaseous nitrogen.

REFERENCES:
patent: 3723838 (1973-03-01), Kumagai
patent: 4215156 (1980-07-01), Dalal et al.
patent: 4374912 (1983-02-01), Kaneki et al.
Wittmer, "High-Temperature Contact Structures for Silicon Semiconductor Devices", Appl. Phys. Lett., 37(6), Sep. 1980, pp. 540-542.

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