Method of producing semiconductor device having light receiving

Details Method of producing semiconductor device having light receiving Method of producing semiconductor device having light receiving

1991-11-18

1993-02-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 3, 437 4, 437 90, 257189, 257458, H01L 3118

Patent

active

051852721

ABSTRACT:
A semiconductor device includes a substrate, a first layer formed on the substrate and made of a semiconductor of a first conductive type, a second layer formed on the first layer and functioning as a photoabsorption layer, a third layer formed on the second layer and made of a semiconductor of the first conductive type, a plurality of regions formed in the third layer and made of a semiconductor of a second conductive type opposite to the first conductive type thereby forming a plurality of pin diodes, where each of the regions at least reaches the second layer, and a plurality of electrodes respectively formed on the regions and made of the same electrode material. A first electrode of the plurality of electrodes receives a positive voltage to forward bias a first pin diode of the plurality of pin diodes and a second electrode of the plurality of electrodes receives a negative voltage to reverse bias a second pin diode of the plurality of pin diodes so that the second pin diode operates as a pin photodiode.

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