Method of producing semiconductor device and rinse for cleaning

Details Method of producing semiconductor device and rinse for cleaning Method of producing semiconductor device and rinse for cleaning

1997-01-09

1999-06-15

Pyon, Harold Y.

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 3, 134 28, 134 38, 438700, 438906, B08B 308, H01L 2144

Patent

active

059118369

ABSTRACT:
A method of producing a semiconductor device, which includes applying a conductive metal film on a semiconductor wafer, applying a photoresist on the conductive metal film, removing the photoresist with a removing agent containing a fluorine compound or at least one basic component selected from the group consisting of a quaternary ammonium hydroxide, an alkanolamine and a mixture of an alkanolamine and a reducing agent, and cleaning the resultant semiconductor device by rinsing with a rinse comprising water and at least one peroxide compound. The method of the present invention can provide a highly accurate wiring circuit without corrosion of the conductive metal film.

REFERENCES:
patent: 4744834 (1988-05-01), Haq
patent: 5037724 (1991-08-01), Maeda et al.
patent: 5453401 (1995-09-01), Grivna et al.
patent: 5630904 (1997-05-01), Aoyama et al.
patent: 5650356 (1997-07-01), Grivna et al.

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