Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

1984-01-19

1985-03-19

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29591, 148 15, 148187, 357 67, 357 239, H01L 2144, H01L 2940

Patent

active

045050287

ABSTRACT:
A silicon wafer having a tungsten and/or molybdenum film formed on its surface is heat-treated in hydrogen containing water vapor. Thus, silicon can be selectively oxidized without substantially oxidizing tungsten and/or molybdenum.

REFERENCES:
patent: 3679492 (1972-07-01), Fang et al.
patent: 3752711 (1973-08-01), Kooi et al.
patent: 3959025 (1976-05-01), Polinsky
patent: 4093503 (1978-06-01), Harris et al.
patent: 4410801 (1983-10-01), Sakurai et al.

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