Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-08-08
2010-11-02
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S928000
Reexamination Certificate
active
07825004
ABSTRACT:
A method of producing a semiconductor device according to the present invention comprises steps of:(A) forming trenches (13) on the front surface (FS) of a semiconductor substrate (11) on the back surface (BS) of which a nitride film (12b) is formed;(B) depositing an insulating film (15) to bury the trenches (13);(C) removing the nitride film (12b) on the back surface (BS) of the semiconductor substrate (11) after the step (B); and(D) annealing before the insulating film (15) is etched after the step (C).
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Elpida Memory Inc.
Foley & Lardner LLP
Garber Charles D
Junge Bryan R
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