Method of producing semiconductor device

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material

Reexamination Certificate

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C438S928000

Reexamination Certificate

active

07825004

ABSTRACT:
A method of producing a semiconductor device according to the present invention comprises steps of:(A) forming trenches (13) on the front surface (FS) of a semiconductor substrate (11) on the back surface (BS) of which a nitride film (12b) is formed;(B) depositing an insulating film (15) to bury the trenches (13);(C) removing the nitride film (12b) on the back surface (BS) of the semiconductor substrate (11) after the step (B); and(D) annealing before the insulating film (15) is etched after the step (C).

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