Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

2011-06-21

2011-06-21

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C257S797000, C257SE23179, C257SE21585, C257S622000

Reexamination Certificate

active

07964472

ABSTRACT:
A semiconductor device is manufactured by forming a mask having a first opening and a second opening wider than the first opening on a principal surface of a first conductivity type semiconductor substrate, etching semiconductor portions of the first conductivity type semiconductor substrate exposed in the first and second openings to thereby form a first trench in the first opening and form a second trench deeper than the first trench in the second opening, and filling the first and second trenches with a second conductivity type semiconductor to concurrently form an alignment marker for device production and a junction structure of alternate arrangement of the first conductivity type semiconductor and the second conductivity type semiconductor. In this manner, it is possible to provide a semiconductor device in which a parallel pn structure and an alignment marker can be formed concurrently to improve the efficiency of a manufacturing process.

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