Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

1976-07-15

1978-01-03

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

136 89TF, 148175, 156610, 427 39, 427 82, 427 84, 427 86, C23C 1500

Patent

active

040665275

ABSTRACT:
A method of producing a semiconductor device comprising the step of forming a laminated element film on a substrate made of a material easy to cleave and easy to dissolve in various solvents such as water by successively depositing materials of the laminated element film on the substrate by what is called the ionized-cluster-deposition process so that crystalline film layers oriented by the crystal axis of the substrate material may be made to grow on the substrate, separating the laminated element film from the substrate by dissolving the substrate material in a solvent, and forming the semiconductor device by furnishing the separated laminated element film with suitable electrodes, etc.

REFERENCES:
patent: 3370980 (1968-02-01), Anderson
patent: 3968019 (1976-07-01), Hanazono et al.
S. Aisenberg et al., "Physics of Ion Plating & Ion Beam Deposition", J. Vac. Sci. Tech., vol. 10, No. 1, Jan./Feb. 1973, pp. 104-107.
L. B. Leder, "Fundamental Parameters of Ion Plating," Metal Finishing, Mar. 1974, pp. 41-45.

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