Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-09-29
1985-10-08
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29578, 29576B, 148186, 148187, 148188, 148 15, H01L 21302, H01L 2131
Patent
active
045451141
ABSTRACT:
A bipolar or MOS semiconductor device is produced by self-alignment by (a) forming an insulating film on a semiconductor substrate, (b) forming a first conductive film, on the semiconductor substrate and (c) forming a first masking film having a window. The conductive film is then (d) anisotropically etched to form an opening and then, (e) transversely etched to form a protruding portion of the first masking film. A second masking film is (f) forming a second masking film on the insulating film through the window, (g) an uncovered portion of the insulating film under the protruding portion, is etched and (h) a second conductive film connecting the first conductive film and the exposed portion of the semiconductor substrate is formed.
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Japanese Journal of Applied Physics, "High Speed Bipolar ICs Using Super Self-Aligned Process Technology", Tetsushi Sakai et al., vol. 20, (1981), Supplement 20-1, pp. 155-159, (Proceedings of the 12th Conference on Solid-State Devices, Tokyo, 1980).
Petersen, "Ultra-Thin Base, Beam-Crystallized Bipolar Transistor", IBM Techn. Discl. Bull., vol. 22, No. 11, 4/80.
Fukano Tetsu
Horie Hiroshi
Ito Takashi
Sugii Toshihiro
Auyang Hunter L.
Fujitsu Limited
Hearn Brian E.
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